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BUK7514-60E,127N-Channel 60 V 58A (Tc) 96W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK751-926145
ManufacturerNXP Semiconductors
MPN #.BUK7514-60E,127
Estimated Lead Time-
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DatasheetDatasheetBUK7514-60E(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUK75
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1730 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation96W (Tc)
RDS(on) Drain-to-Source On Resistance13mOhm @ 15A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
BUK7514-60E
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Obsolescence/ EOL
Multiple Devices 29/Dec/2014
PCN Packaging
All Dev Label Update 15/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7514-60E is an N-channel MOSFET manufactured by NXP Semiconductors. It features a 60V drain-source voltage and can handle up to 58A of continuous current when its case is appropriately cooled. The device is capable of dissipating 96W of power under optimal conditions. Housed in a TO-220AB through-hole package, it offers a gate charge of 22.9 nC at 10V and a low on-state resistance of 13mOhm at 15A and 10V, making it efficient for high-switching frequency applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.