BSN254,126N-Channel 250 V 310mA (Ta) 1W (Ta) Through Hole TO-92-3
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSN254-1031656
ManufacturerNXP Semiconductors
MPN #.BSN254,126
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BSN254, BSN254A(PDF)
BSN254, BSN254A(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberBSN2
Continuous Drain Current (ID) @ 25°C310mA (Ta)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.4V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)120 pF @ 25 V
MfrNXP USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance5Ohm @ 300mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part BSN254,126 is an N-channel MOSFET manufactured by NXP Semiconductors, designed for general use in electronic circuits. It can handle a maximum voltage of 250 V and a continuous drain current of 310 mA in a free-air setting, with a power dissipation of 1 W under the same conditions. The device is encapsulated in a TO-92-3 through-hole package, making it suitable for easy insertion into a circuit board. The MOSFET exhibits an input capacitance of 120 pF at 25 V and has a drain-source on-resistance of 5 Ohms when operated at a drain current of 300mA and a gate-source voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.