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AFT31150NR5RF Mosfet 32 V 100 mA 2.7GHz ~ 3.1GHz 17.2dB 150W OM-780-2

1:$167.4050

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ABRmicro #.ABR285-AFT311-907809
ManufacturerNXP Semiconductors
MPN #.AFT31150NR5
Estimated Lead Time10 Weeks
SampleGet Free Sample
DatasheetDatasheetAFT31150N (PDF)
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In Stock: 80
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$167.4050
Ext. Price$167.4050
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Qty.Unit PriceExt. Price
1$167.4050$167.4050
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberAFT31150
Current - Test100 mA
Current Rating (Amps)10µA
Frequency2.7GHz ~ 3.1GHz
Gain17.2dB
Mounting StyleSurface Mount
Noise Figure-
Output Power150W
Package Type (Mfr.)OM-780-2
TechnologyLDMOS
Rated Voltage65 V
Voltage - Test32 V
Package / CaseOM-780-2
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
AFT31150N
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Assembly/Origin
Oak Hill Fab Radio 16/Jul/2021
PCN Design/Specification
Mult Dev 25/May/2020Trace Marking Removal 20/Jun/2019
PCN Packaging
All Dev Label Update 15/Dec/2020Mult Dev Pkg Seal 15/Dec/2020
Video File
5G Wireless Infrastructure for a Connected World
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The AFT31150NR5 is an RF MOSFET manufactured by NXP Semiconductors, designed for high-frequency applications within the 2.7GHz to 3.1GHz range. It operates at a voltage of 32V with a current rating of 100mA and delivers a power output of up to 150W, exhibiting a gain of 17.2dB. This device utilizes Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology, characterized by its low drain-source current of 10µA and a high maximum drain-source voltage of 65V. Packaged in an OM-780-2 enclosure, it caters to demanding requirements with efficiency and reliability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.