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A2T21S260W12NR3RF Mosfet 28 V 1.6 A 2.11GHz ~ 2.2GHz 17.9dB 218W OM-880X-2L2L

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ABRmicro #.ABR285-A2T21S-902836
ManufacturerNXP Semiconductors
MPN #.A2T21S260W12NR3
Estimated Lead Time-
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DatasheetDatasheetA2T21S260W12NR3 (PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberA2T21
Current - Test1.6 A
Current Rating (Amps)10µA
Frequency2.11GHz ~ 2.2GHz
Gain17.9dB
Mounting StyleChassis Mount
Noise Figure-
Output Power218W
Package Type (Mfr.)OM-880X-2L2L
TechnologyLDMOS
Rated Voltage65 V
Voltage - Test28 V
Package / CaseOM-880X-2L2L
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
A2T21S260W12NR3
Environmental Information
NXP USA Inc REACHNXP USA Inc RoHS Cert
PCN Packaging
All Dev Label Update 15/Dec/2020Mult Dev Pkg Seal 15/Dec/2020
Video File
5G Wireless Infrastructure for a Connected World
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
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Additional Details
The part A2T21S260W12NR3, manufactured by NXP Semiconductors, is an RF MOSFET designed for high-frequency applications. It operates at 28 volts and supports a current of 1.6 amperes in the frequency range of 2.11 GHz to 2.2 GHz. The device provides a power output of 218 watts with a gain of 17.9 dB, and it comes in an OM-880X-2L2L package. This transistor features LDMOS technology, which enhances its performance under a 65-volt maximum breakdown voltage with a leakage current rating of 10 microamperes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.