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NP82N06NLG-S18-AYN-Channel 60 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-262

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ABRmicro #.ABR278-NP82N0-953455
ManufacturerNEC Corporation
MPN #.NP82N06NLG-S18-AY
Estimated Lead Time-
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DatasheetDatasheetDatasheet (PDF)
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In Stock: 3220
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
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Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C82A (Tc)
Drain-to-Source Voltage (VDS)60 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)160 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8550 pF @ 25 V
MfrNEC Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 143W (Tc)
RDS(on) Drain-to-Source On Resistance7.4mOhm @ 41A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The NP82N06NLG-S18-AY is an N-Channel MOSFET manufactured by NEC Corporation. It is designed to handle a maximum voltage of 60V and a current of 82A under certain conditions. The part is housed in a TO-262 package, suitable for through-hole mounting. It features a power dissipation of 1.8W when measured in air (Ta) and can dissipate up to 143W when a case (Tc) is used. The device exhibits a low on-resistance of 7.4 milliohms when conducting 41A with a gate-source voltage of 10V, facilitating efficient current conduction. Additionally, it has a gate charge of 160 nC when driven at 10V, indicating the charge needed to fully turn on the device. The threshold voltage to start the conduction is 2.5V at 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.