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NP80N055MDG-S18-AYN-Channel 55 V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-220

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ABRmicro #.ABR278-NP80N0-1323495
ManufacturerNEC Corporation
MPN #.NP80N055MDG-S18-AY
Estimated Lead Time-
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DatasheetDatasheetDatasheet (PDF)
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In Stock: 4445
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6900 pF @ 25 V
MfrNEC Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 115W (Tc)
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 40A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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