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NP82N04NLG-S18-AYN-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-262

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ABRmicro #.ABR2045-NP82N0-1667900
ManufacturerNEC Corporation
MPN #.NP82N04NLG-S18-AY
Estimated Lead Time-
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DatasheetDatasheetNP82N04MLG-S18-AY(PDF)
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In Stock: 1190
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C82A (Tc)
Drain-to-Source Voltage (VDS)40 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9000 pF @ 25 V
MfrNEC Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 143W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 41A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
NP82N04MLG-S18-AY
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)