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JANTXV2N7335Mosfet Array 100V 750mA 1.4W Through Hole MO-036AB

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ABRmicro #.ABR2045-JANTXV-2197141
ManufacturerMicrosemi
MPN #.JANTXV2N7335
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet2N7335(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N733
Configuration4 P-Channel
Continuous Drain Current (ID) @ 25°C750mA
Drain-to-Source Voltage (VDS)100V
FET Feature-
Gate Charge Total (Qg)(Max.)-
GradeMilitary
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)-
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.4W
QualificationMIL-PRF-19500/599
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 500mA, 10V
Package Type (Mfr.)MO-036AB
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case14-DIP (0.300", 7.62mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
2N7335
Environmental Information
Microchip REACHMicrochip RoHS
PCN Obsolescence/ EOL
Last Time Buy Revision 08/Jul/2015Multiple Devices 12/Jun/2015
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)