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2N3960Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

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ABRmicro #.ABR2045-2N3960-2242305
ManufacturerMicrosemi
MPN #.2N3960
Estimated Lead Time-
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DatasheetDatasheet2N3960(PDF)
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In Stock: 53
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Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Base Product Number2N3960
Collector Cut-off Current (Iᴄᴇs)(Max.)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 1V
Frequency - Transition-
MfrMicrosemi Corporation
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max400 mW
Package Type (Mfr.)TO-18 (TO-206AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300mV @ 3mA, 30mA
Collector-Emitter Breakdown Voltage (Max.)12 V
Package / CaseTO-206AA, TO-18-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
2N3960
Environmental Information
Microchip REACHMicrochip RoHS
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)