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JANTX2N6802N-Channel 500 V 2.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)

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ABRmicro #.ABR2045-JANTX2-2258884
ManufacturerMicrosemi
MPN #.JANTX2N6802
Estimated Lead Time-
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In Stock: 3
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Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
GradeMilitary
MfrMicrosemi Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation800mW (Ta), 25W (Tc)
QualificationMIL-PRF-19500/557
RDS(on) Drain-to-Source On Resistance1.6Ohm @ 2.5A, 10V
Package Type (Mfr.)TO-205AF (TO-39)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-205AF Metal Can
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Environmental Information
Microchip REACHMicrochip RoHS
PCN Obsolescence/ EOL
Last Time Buy Revision 08/Jul/2015Multiple Devices 12/Jun/2015
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)