JAN2N6250Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-3 (TO-204AA)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-JAN2N6-2378664
ManufacturerMicrosemi
MPN #.JAN2N6250
Estimated Lead Time-
SampleGet Free Sample
Datasheet
2N6249,50,51(T1)(PDF)
2N6249,50,51(T1)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 125
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
JANTXV2N2221AL$8.4480
Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 (TO-206AA) Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Base Product Number2N6250
Collector Current (Iᴄ)@25°C10 A
Collector Cut-off Current (Iᴄᴇs)(Max.)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 10A, 3V
Frequency - Transition-
GradeMilitary
MfrMicrosemi Corporation
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max6 W
QualificationMIL-PRF-19500/510
Package Type (Mfr.)TO-3 (TO-204AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.25A, 10A
Collector-Emitter Breakdown Voltage (Max.)275 V
Package / CaseTO-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)