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JAN2N2857RF Transistor NPN 15V 40mA 500MHz 200mW Through Hole TO-72

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ABRmicro #.ABR2045-JAN2N2-2478507
ManufacturerMicrosemi
MPN #.JAN2N2857
Estimated Lead Time-
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DatasheetDatasheet2N2857(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C40mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3mA, 1V
Frequency - Transition500MHz
Gain12.5dB ~ 21dB @ 450MHz
GradeMilitary
Mounting StyleThrough Hole
Noise Figure (dB Typ @ f)4.5dB @ 450MHz
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max200mW
QualificationMIL-PRF-19500/343
Package Type (Mfr.)TO-72
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Max.)15V
Package / CaseTO-72-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N2857
Environmental Information
Microchip REACHMicrochip RoHS
PCN Obsolescence/ EOL
2N2857/UB OBS 18/May/2018
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)