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JAN2N2221ALBipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 (TO-206AA)

1:$6.8310

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ABRmicro #.ABR2045-JAN2N2-2421596
ManufacturerMicrosemi
MPN #.JAN2N2221AL
Estimated Lead Time22 Weeks
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In Stock: 54
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 6.8310
Ext. Price$ 6.8310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
100$6.8310$683.1000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Base Product Number2N2221
Collector Current (Iᴄ)@25°C800 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
GradeMilitary
MfrMicrosemi Corporation
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max500 mW
QualificationMIL-PRF-19500/255
Package Type (Mfr.)TO-18 (TO-206AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-206AA, TO-18-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)