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GT110N06D5N-Channel 60 V 45A (Tc) 69W (Tc) Surface Mount 8-DFN (4.9x5.75)

1:$0.7440

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-GT110N-2094003
ManufacturerGoford Semiconductor
MPN #.GT110N06D5
Estimated Lead Time8 Weeks
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DatasheetDatasheetGT110N06D5 (PDF)
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In Stock: 6983
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.7440
Ext. Price$0.7440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7440$0.7440
10$0.6450$6.4490
100$0.4470$44.7310
500$0.3740$187.0000
1000$0.3180$317.6880
2000$0.2830$565.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesGT
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C45A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1202 pF @ 30 V
MfrGoford Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 14A, 10V
Package Type (Mfr.)8-DFN (4.9x5.75)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
GT110N06D5
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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