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GT023N10TN-Channel 100 V 140A (Tc) 500W (Tc) Through Hole TO-220

1:$2.2850

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-GT023N-2111707
ManufacturerGoford Semiconductor
MPN #.GT023N10T
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetGT023N10T(PDF)
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In Stock: 70
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 2.2850
Ext. Price$ 2.2850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2850$2.2850
50$1.8120$90.6000
100$1.5530$155.3000
500$1.3810$690.5000
1000$1.1820$1182.0000
2000$1.1130$2226.0000
5000$1.0680$5340.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8086 pF @ 50 V
MfrGoford Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance2.7mOhm @ 20A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
GT023N10T
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)