ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
GC11N65TN-Channel 650 V 11A (Tc) 192W (Tc) Through Hole TO-220

1:$1.3190

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-GC11N6-2096190
ManufacturerGoford Semiconductor
MPN #.GC11N65T
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetGC11N65T(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 68
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.3190
Ext. Price$ 1.3190
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3190$1.3190
10$1.0950$10.9500
100$0.8710$87.1000
500$0.7380$369.0000
1000$0.6260$626.0000
2000$0.5940$1188.0000
5000$0.5720$2860.0000
10000$0.5530$5530.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
03N06$0.3460
Goford Semiconductor
N-Channel 60 V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23
G2003A$0.2970
Goford Semiconductor
N-Channel 190 V 3A (Tc) 1.8W (Tc) Surface Mount SOT-23-3
G20N06D52$0.5470
Goford Semiconductor
Mosfet Array 60V 20A (Tc) 48W (Tc) Surface Mount 8-DFN (4.9x5.75)
GT023N10T$2.2850
Goford Semiconductor
N-Channel 100 V 140A (Tc) 500W (Tc) Through Hole TO-220
GT090N06D52$0.9170
Goford Semiconductor
Mosfet Array 60V 40A (Tc) 62W (Tc) Surface Mount 8-DFN (4.9x5.75)
GT110N06D5$0.7000
Goford Semiconductor
N-Channel 60 V 45A (Tc) 69W (Tc) Surface Mount 8-DFN (4.9x5.75)
GT110N06S$0.5870
Goford Semiconductor
N-Channel 60 V 14A (Tc) 3W (Tc) Surface Mount 8-SOP
Technical Specifications
SeriesCool MOS™
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)901 pF @ 50 V
MfrGoford Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation192W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
GC11N65T
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)