G75P04FIP-Channel 40 V 60A (Tc) 89W (Tc) Through Hole TO-220F
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ABRmicro #.ABR278-G75P04-2112430
ManufacturerGoford Semiconductor
MPN #.G75P04FI
Estimated Lead Time-
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Datasheet
G75P04FI (PDF)
G75P04FI (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesTrenchFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)106 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6275 pF @ 20 V
MfrGoford Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation89W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 10A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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