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G700P06TP-Channel 60 V 25A (Tc) 100W (Tc) Through Hole TO-220
1:$0.5730
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-G700P0-2188260
ManufacturerGoford Semiconductor
MPN #.G700P06T
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetG700P06T (PDF)
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In Stock: 116
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.5730
Ext. Price$0.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5730$0.5730
50$0.4720$23.5880
100$0.3420$34.2130
500$0.2860$142.9060
1000$0.2430$243.3130
2000$0.2170$433.5000
5000$0.2050$1025.3130
10000$0.1890$1891.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1428 pF @ 30 V
MfrGoford Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance70mOhm @ 4A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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