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G60N04KN-Channel 40 V 60A (Tc) 65W (Tc) Surface Mount TO-252 (DPAK)
1:$0.6150
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-G60N04-2206051
ManufacturerGoford Semiconductor
MPN #.G60N04K
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetG60N04K (PDF)
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In Stock: 1702
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.6150
Ext. Price$0.6150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6150$0.6150
10$0.5330$5.3340
100$0.3690$36.8690
500$0.3080$154.0630
1000$0.2620$262.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 20 V
MfrGoford Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation65W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 30A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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