G30N04D3N-Channel 40 V 30A (Tc) 19.8W (Tc) Surface Mount 8-DFN (3.15x3.05)
1:$0.5730
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-G30N04-2131801
ManufacturerGoford Semiconductor
MPN #.G30N04D3
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
G30N04D3 (PDF)
G30N04D3 (PDF)
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Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 1430
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.5730
Ext. Price$0.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5730$0.5730
10$0.4940$4.9410
100$0.3420$34.2130
500$0.2860$142.9060
1000$0.2430$243.3130
2000$0.2170$433.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1780 pF @ 20 V
MfrGoford Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation19.8W (Tc)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 20A, 10V
Package Type (Mfr.)8-DFN (3.15x3.05)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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