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G10N10AN-Channel 100 V 10A (Tc) 28W (Tc) Surface Mount TO-252

1:$0.4660

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-G10N10-2134817
ManufacturerGoford Semiconductor
MPN #.G10N10A
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetG10N10A(PDF)
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In Stock: 3355
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.4660
Ext. Price$ 0.4660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4660$0.4660
10$0.3950$3.9500
100$0.2750$27.5000
500$0.2140$107.0000
1000$0.1740$174.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)690 pF @ 25 V
MfrGoford Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation28W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 2A, 10V
Package Type (Mfr.)TO-252
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
G10N10A
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)