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ULS2070H-883Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.5A 2.2W Through Hole 16-CERDIP

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ABRmicro #.ABR277-ULS207-2837085
MPN #.ULS2070H-883
Estimated Lead Time-
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In Stock: 1096
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
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Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C1.5A
Collector Cut-off Current (Iᴄᴇs)(Max.)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)
Power - Max2.2W
Package Type (Mfr.)16-CERDIP
Transistor Type4 NPN Darlington (Quad)
Vce Saturation (Max) @ Ib, Ic-
Collector-Emitter Breakdown Voltage (Max.)50V
Base Product NumberULS2070
Package / Case16-CDIP (0.300", 7.62mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
HTSUS8542.39.0001 (No rates found in the Harmonized Tariff Schedule)
RoHS ComplianceNot covered by or subject to the RoHS directive
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
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