ULS2801H-883Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-CERDIP
N/A
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ABRmicro #.ABR277-ULS280-2724623
ManufacturerAllegro MicroSystems
MPN #.ULS2801H-883
Estimated Lead Time-
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Datasheet
ULS2825H-883 (PDF)
ULS2825H-883 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberULS2801
Collector Current (Iᴄ)@25°C600mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)
Power - Max1W
Package Type (Mfr.)18-CERDIP
Transistor Type8 NPN Darlington
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case18-CDIP (0.300", 7.62mm)
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Datasheets
Environmental & Export Classifications
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS0000.00.0000 (No rates found in the Harmonized Tariff Schedule)
RoHS ComplianceNot covered by or subject to the RoHS directive
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
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