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ULS2075H-883Bipolar (BJT) Transistor Array 4 PNP Darlington (Quad) 50V 1.5A 2.2W Through Hole 16-CERDIP

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ABRmicro #.ABR277-ULS207-2118890
MPN #.ULS2075H-883
Estimated Lead Time-
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In Stock: 112
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberULS2075
Collector Current (Iᴄ)@25°C1.5A
Collector Cut-off Current (Iᴄᴇs)(Max.)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)
Power - Max2.2W
Package Type (Mfr.)16-CERDIP
Transistor Type4 PNP Darlington (Quad)
Vce Saturation (Max) @ Ib, Ic1.75V @ 2mA, 1.25A
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case16-CDIP (0.300", 7.62mm)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS0000.00.0000 (No rates found in the Harmonized Tariff Schedule)
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