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XP83T03GJBN-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251S
1:$1.1360
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-XP83T0-2823032
ManufacturerYAGEO XSEMI
MPN #.XP83T03GJB
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetXP83T03GJB Data... (PDF)
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In Stock: 686
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.1360
Ext. Price$1.1360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1360$1.1360
80$0.4930$39.4400
160$0.4400$70.3800
560$0.3660$204.6800
1040$0.3360$349.1800
2000$0.3090$618.3750
5040$0.2780$1403.0100
10000$0.2590$2592.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesXP83T03
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1840 pF @ 25 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 40A, 10V
Package Type (Mfr.)TO-251S
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Base Product NumberXP83
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
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