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XP2N1K2EN1N-Channel 20 V 200mA (Ta) 150mW (Ta) Surface Mount SOT-723

1:$0.4270

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-XP2N1K-2101783
ManufacturerYAGEO XSEMI
MPN #.XP2N1K2EN1
Estimated Lead Time26 Weeks
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DatasheetDatasheetXP2N1K2EN1 Data... (PDF)
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In Stock: 698
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.4270
Ext. Price$0.4270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4270$0.4270
10$0.3290$3.2940
100$0.1970$19.6560
500$0.1820$90.8440
1000$0.1240$124.3130
2000$0.1150$229.5000
5000$0.1090$547.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesXP2N1K2E
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberXP2N
Continuous Drain Current (ID) @ 25°C200mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 2.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.7 nC @ 2.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)44 pF @ 10 V
MfrYAGEO XSEMI
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150mW (Ta)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 200mA, 2.5V
Package Type (Mfr.)SOT-723
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSOT-723
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
XP2N1K2EN1 Datasheet
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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