XP60SL115DRN-Channel 600 V 28A (Tc) 2W (Ta), 178W (Tc) Through Hole TO-262
1:$4.1530
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-XP60SL-2870528
ManufacturerYAGEO XSEMI
MPN #.XP60SL115DR
Estimated Lead Time16 Weeks
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Datasheet
XP60SL115DR Dat... (PDF)
XP60SL115DR Dat... (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 698
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$4.1530
Ext. Price$4.1530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.1530$4.1530
50$2.1560$107.7910
100$1.9620$196.2440
500$1.6220$811.2190
1000$1.5180$1518.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesXP60SL115D
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 178W (Tc)
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
RDS(on) Drain-to-Source On Resistance115mOhm @ 9.6A, 10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5120 pF @ 100 V
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
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