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XP60AN750INN-Channel 600 V 10A (Tc) 1.92W (Ta), 36.7W (Tc) Through Hole TO-220CFM

1:$2.8210

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-XP60AN-2716483
ManufacturerYAGEO XSEMI
MPN #.XP60AN750IN
Estimated Lead Time26 Weeks
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In Stock: 700
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$2.8210
Ext. Price$2.8210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8210$2.8210
50$2.2360$111.7750
100$1.9170$191.6750
500$1.7030$851.5940
1000$1.4590$1458.8130
2000$1.3740$2747.6250
5000$1.3180$6587.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesXP60AN750
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
RDS(on) Drain-to-Source On Resistance750mOhm @ 5A, 10V
Package Type (Mfr.)TO-220CFM
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Gate Charge Total (Qg)(Max.)59.2 nC @ 10 V
Base Product NumberXP60
Maximum Power Dissipation1.92W (Ta), 36.7W (Tc)
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2688 pF @ 100 V
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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