WNSCM80120WQN-Channel 1200 V 42A (Ta) 230W (Ta) Through Hole TO-247-3
1:$6.1820
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-WNSCM8-2811844
ManufacturerWeEn Semiconductors
MPN #.WNSCM80120WQ
Estimated Lead Time8 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 6.1820
Ext. Price$ 6.1820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$6.1820$18546.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C42A (Ta)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
Base Product NumberWNSCM80120
Gate Charge Total (Qg)(Max.)59 nC @ 20 V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 6mA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1350 pF @ 1000 V
RDS(on) Drain-to-Source On Resistance98mOhm @ 20A, 20V
Maximum Power Dissipation230W (Ta)
Package / CaseTO-247-3
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info@Abrmicro.com Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)