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WNSC2M1K0170WQN-Channel 1700 V 7A (Ta) 79W (Ta) Through Hole TO-247-3
1:$2.8600
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-WNSC2M-2190103
ManufacturerWeEn Semiconductors
MPN #.WNSC2M1K0170WQ
Estimated Lead Time8 Weeks
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DatasheetWNSC2M1K0170W(PDF)
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In Stock: 34
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 2.8600
Ext. Price$ 2.8600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
480$2.8600$1372.8000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Base Product NumberWNSC2
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)1700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)225 pF @ 1000 V
MfrWeEn Semiconductors
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Ta)
RDS(on) Drain-to-Source On Resistance1Ohm @ 1A, 18V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+22V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.2V @ 800µA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)