VFT3060G-E3/4WDiode Array 1 Pair Common Cathode 60 V 15A Through Hole TO-220-3 Full Pack, Isolated Tab
1:$0.4650
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR286-VFT306-2538
ManufacturerVishay General Semiconductor
MPN #.VFT3060G-E3/4W
Estimated Lead Time10 Weeks
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Datasheet
V(B/F/I)T3060G (PDF)
V(B/F/I)T3060G (PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.4650
Ext. Price$0.4650
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Price Gradients
Qty.Unit PriceExt. Price
2000$0.4650$930.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberVFT3060
Average Forward Rectified Current (per diode)15A
Reverse Leakage Current @ Rated Vʀ850 µA @ 60 V
Diode Configuration1 Pair Common Cathode
Mounting StyleThrough Hole
Junction Temperature Range-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
Package Type (Mfr.)ITO-220AB
TechnologySchottky
Max. DC Blocking Voltage (Vʀ)60 V
Forward Voltage (Vғ) @ Iғ730 mV @ 15 A
Package / CaseTO-220-3 Full Pack, Isolated Tab
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)
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Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3
Additional Details
The VFT3060G-E3/4W is a diode array manufactured by Vishay General Semiconductor, designed with a common cathode configuration. It supports a voltage rating of 60 V and a current rating of 15 A, housed in a TO-220-3 full pack package with an isolated tab for efficient thermal management. This component features a forward voltage drop of 730 mV at 15 A, and a reverse current of 850 µA at 60 V, ensuring efficient operation. The diode array offers fast recovery times of less than 500 ns with a minimum conducting current of 200 mA, making it suitable for applications requiring quick switching capabilities.
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