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UGE10DCT-E3/45Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3

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ABRmicro #.ABR286-UGE10D-2393
MPN #.UGE10DCT-E3/45
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberUGE10
Average Forward Rectified Current (per diode)5A
Reverse Leakage Current @ Rated Vʀ10 µA @ 200 V
Diode Configuration1 Pair Common Cathode
Mounting StyleThrough Hole
Junction Temperature Range-40°C ~ 150°C
Reverse Recovery Time (trr)25 ns
SpeedFast Recovery =< 500ns, > 200mA (Io)
Package Type (Mfr.)TO-220-3
TechnologyStandard
Max. DC Blocking Voltage (Vʀ)200 V
Forward Voltage (Vғ) @ Iғ1.1 V @ 5 A
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)
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Zener Diode 56 V 1 W ±5% Surface Mount DO-213AB (MELF)
Diode 1200 V 500mA Through Hole DO-204AL (DO-41)
Diode Array 1 Pair Common Cathode 60 V 15A Through Hole TO-220-3 Full Pack, Isolated Tab
Diode 600 V 8A Surface Mount TO-263AB (D2PAK)
Additional Details
The UGE10DCT-E3/45 is a diode array manufactured by Vishay General Semiconductor. This electronic component consists of a pair of diodes with a common cathode configuration, housed in a TO-220-3 package suitable for through-hole mounting. It is designed to handle reverse voltages up to 200 volts and a forward current of 5 amperes. The diode array features a standard recovery time of 25 nanoseconds and operates with a forward voltage drop of 1.1 volts at 5 amperes, making it efficient for general rectification tasks in electrical circuits.
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