BA979-GS18RF Diode PIN - Single 30V 50 mA SOD-80 QuadroMELF
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ABRmicro #.ABR284-BA979--6568
ManufacturerVishay General Semiconductor
MPN #.BA979-GS18
Estimated Lead Time-
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Datasheet
BA979(S) (PDF)
BA979(S) (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBA979
Total Capacitance @ Vʀ, f0.5pF @ 0V, 100MHz
Max. Current50 mA
Diode TypePIN - Single
Operating Temperature125°C (TJ)
Forward Resistance @ Freq & Iғ50Ohm @ 1.5mA, 100MHz
Package Type (Mfr.)SOD-80 QuadroMELF
Peak Inverse Voltage30V
Package / CaseSOD-80 Variant
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0070 (With a maximum current of 0.5 A or less; No import duty applies)
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Additional Details
The BA979-GS18 is a single PIN (positive-intrinsic-negative) RF diode manufactured by Vishay General Semiconductor, designed for high-frequency applications. It features a maximum reverse voltage of 30V and a forward current rating of 50 mA, making it suitable for signal detection, mixing, and RF signal processing. The diode is packaged in a SOD-80 QuadroMELF configuration, providing a compact footprint for surface-mount applications while ensuring enhanced thermal performance and reliability. Its low capacitance and fast switching speeds are ideal for use in RF circuits, where efficiency and signal integrity are paramount.
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