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BA282-TRRF Diode Standard - Single 35V 100 mA DO-204AH (DO-35)
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ABRmicro #.ABR284-BA282--63245
ManufacturerVishay General Semiconductor
MPN #.BA282-TR
Estimated Lead Time-
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DatasheetBAS281 thru BAS... (PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBA282
Total Capacitance @ Vʀ, f1.25pF @ 3V, 100MHz
Max. Current100 mA
Diode TypeStandard - Single
Operating Temperature125°C (TJ)
Forward Resistance @ Freq & Iғ500mOhm @ 10mA, 200MHz
Package Type (Mfr.)DO-204AH (DO-35)
Peak Inverse Voltage35V
Package / CaseDO-204AH, DO-35, Axial
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0070 (With a maximum current of 0.5 A or less; No import duty applies)
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Additional Details
The BA282-TR, manufactured by Vishay General Semiconductor, is a standard single RF diode housed in a DO-204AH (DO-35) package. It is designed to handle a maximum reverse voltage of 35V and a forward current of up to 100 mA. This diode exhibits a dynamic resistance of 500 milliohms at 10 mA and can operate efficiently at frequencies up to 200 MHz. Additionally, it features a low capacitance of 1.25 pF when measured at 3V and 100 MHz, making it suitable for high-frequency signal processing tasks where minimal parasitic capacitance is important.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.