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TP90H050WSN-Channel 900 V 34A (Tc) 119W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-TP90H0-2808769
ManufacturerTransphorm
MPN #.TP90H050WS
Estimated Lead Time-
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DatasheetDatasheetTP90H050WS(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.5 nC @ 10 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C
Maximum Power Dissipation119W (Tc)
Package Type (Mfr.)TO-247-3
TechnologyGaNFET (Cascode Gallium Nitride FET)
Gate-to-Source Voltage (Vɢs)±20V
RDS(on) Drain-to-Source On Resistance63mOhm @ 22A, 10V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)980 pF @ 600 V
Base Product NumberTP90H050
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 700µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP90H050WS
PCN Obsolescence/ EOL
TP90H050WS obs 29/Aug/2023
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)