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TP65H150G4LSG-TRN-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 3-PQFN (8x8)
1:$3.8450
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H1-2754281
ManufacturerTransphorm
MPN #.TP65H150G4LSG-TR
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetTP65H150G4LSG(PDF)
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In Stock: 4106
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 3.8450
Ext. Price$ 3.8450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.8450$3.8450
10$3.2270$32.2700
100$2.6100$261.0000
500$2.3200$1160.0000
1000$1.9870$1987.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)598 pF @ 400 V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation52W (Tc)
RDS(on) Drain-to-Source On Resistance180mOhm @ 8.5A, 10V
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.8V @ 500µA
Package Type (Mfr.)3-PQFN (8x8)
Package / Case3-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)