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TP65H070LDG-TRN-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

1:$11.4870

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H0-2782503
ManufacturerTransphorm
MPN #.TP65H070LDG-TR
Estimated Lead Time16 Weeks
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DatasheetDatasheetTP65H070L Datasheet(PDF)
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In Stock: 1122
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 11.4870
Ext. Price$ 11.4870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$11.4870$11.4870
10$8.0720$80.7200
100$6.1400$614.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTP65H070L
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)600 pF @ 400 V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation96W (Tc)
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
Package Type (Mfr.)3-PQFN (8x8)
RDS(on) Drain-to-Source On Resistance85mOhm @ 16A, 10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.8V @ 700µA
Package / Case3-PowerDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H070L Datasheet
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99