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TP65H300G4LSGB-TRN-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 8-PQFN (8x8)

1:$3.3180

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H3-2874235
ManufacturerTransphorm
MPN #.TP65H300G4LSGB-TR
Estimated Lead Time16 Weeks
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In Stock: 2077
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 3.3180
Ext. Price$ 3.3180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.3180$3.3180
10$2.1860$21.8600
100$1.5410$154.1000
500$1.2650$632.5000
1000$1.1760$1176.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperGaN®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C6.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)730 pF @ 400 V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation21W (Tc)
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 500µA
Package Type (Mfr.)8-PQFN (8x8)
RDS(on) Drain-to-Source On Resistance312mOhm @ 6.5A, 6V
Package / Case8-VDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)