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TP65H150BG4JSG-TRN-Channel 650 V 16A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6)

1:$4.2540

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-TP65H1-2903801
ManufacturerTransphorm
MPN #.TP65H150BG4JSG-TR
Estimated Lead Time16 Weeks
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DatasheetDatasheetTP65H150BG4JSG (PDF)
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In Stock: 1984
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$4.2540
Ext. Price$4.2540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.2540$4.2540
10$2.8260$28.2630
100$2.0150$201.4500
500$1.6670$833.5310
1000$1.5680$1568.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperGaN®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.9 nC @ 10 V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
Package Type (Mfr.)8-PQFN (5x6)
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 500µA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 400 V
RDS(on) Drain-to-Source On Resistance180mOhm @ 10A, 6V
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H150BG4JSG
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
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