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TP65H100G4LSGB-TRN-Channel 650 V 18.9A (Tc) 65.8W (Tc) Surface Mount 8-PQFN (8x8)
1:$5.9150
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-TP65H1-2922036
ManufacturerTransphorm
MPN #.TP65H100G4LSGB-TR
Estimated Lead Time16 Weeks
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$5.9150
Ext. Price$5.9150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.9150$5.9150
10$3.9960$39.9610
100$2.9060$290.5940
500$2.4410$1220.2810
1000$2.4360$2436.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperGaN®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.4 nC @ 10 V
Grade-
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation65.8W (Tc)
Qualification-
RDS(on) Drain-to-Source On Resistance110mOhm @ 12A, 10V
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
Package Type (Mfr.)8-PQFN (8x8)
Continuous Drain Current (ID) @ 25°C18.9A (Tc)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.1V @ 1.8mA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)818 pF @ 400 V
Package / Case8-VDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
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