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TP65H070G4PSN-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB

1:$7.8170

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H0-2873575
ManufacturerTransphorm
MPN #.TP65H070G4PS
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetTP65H070G4PS(PDF)
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In Stock: 613
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 7.8170
Ext. Price$ 7.8170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.8170$7.8170
50$4.3290$216.4500
100$3.9920$399.2000
500$3.5900$1795.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperGaN®
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 10 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation96W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 18A, 10V
Package Type (Mfr.)TO-220AB
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.7V @ 700µA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)638 pF @ 400 V
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H070G4PS
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99