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TP65H050G4YSN-Channel 650 V 35A (Tc) 132W (Tc) Through Hole TO-247-4L

1:$13.4840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-TP65H0-2907352
ManufacturerTransphorm
MPN #.TP65H050G4YS
Estimated Lead Time17 Weeks
SampleGet Free Sample
DatasheetDatasheetTP65H050G4YS (PDF)
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In Stock: 273
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$13.4840
Ext. Price$13.4840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$13.4840$13.4840
10$9.5330$95.3280
450$7.1720$3227.3440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesSuperGaN®
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 400 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation132W (Tc)
Package Type (Mfr.)TO-247-4L
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.8V @ 700µA
RDS(on) Drain-to-Source On Resistance60mOhm @ 22A, 10V
Package / CaseTO-247-4
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H050G4YS
Environmental & Export Classifications
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
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