ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
TP65H050G4WSN-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3

1:$12.6910

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H0-2805217
ManufacturerTransphorm
MPN #.TP65H050G4WS
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetTP65H050G4WS(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 58
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 12.6910
Ext. Price$ 12.6910
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$12.6910$12.6910
30$7.8170$234.5100
120$6.7510$810.1200
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
TP65H015G5WS$25.9550
Transphorm
N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3
TP65H035G4WS$14.4330
Transphorm
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
TP65H050G4BS$11.4310
Transphorm
N-Channel 650 V 34A (Tc) 119W (Tc) Surface Mount TO-263
TP65H070LSG-TR$8.0410
Transphorm
N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
TP65H150G4LSG-TR$3.8450
Transphorm
N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 3-PQFN (8x8)
TP65H150G4PS$5.3180
Transphorm
N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
TP65H480G4JSG-TR$2.3900
Transphorm
N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
Technical Specifications
SeriesSuperGaN®
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 400 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation119W (Tc)
Package Type (Mfr.)TO-247-3
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.8V @ 700µA
Base Product NumberTP65H050
RDS(on) Drain-to-Source On Resistance60mOhm @ 22A, 10V
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H050G4WS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)