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TP65H035G4WSQAN-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3

1:$15.9940

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TP65H0-2839719
ManufacturerTransphorm
MPN #.TP65H035G4WSQA
Estimated Lead Time16 Weeks
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DatasheetDatasheetTP65H035G4WSQA(PDF)
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In Stock: 159
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 15.9940
Ext. Price$ 15.9940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$15.9940$15.9940
30$10.0510$301.5300
120$9.0840$1090.0800
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C47.2A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 400 V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation187W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance41mOhm @ 30A, 10V
Package Type (Mfr.)TO-247-3
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.8V @ 1mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TP65H035G4WSQA
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)