TRS10E65F,S1QDiode 650 V 10A Through Hole TO-220-2L
1:$2.7820
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2042-TRS10E-1031481
ManufacturerToshiba Electronic Devices & Storage
MPN #.TRS10E65F,S1Q
Estimated Lead Time52 Weeks
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Datasheet
TRS10E65F(PDF)
TRS10E65F(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 2.7820
Ext. Price$ 2.7820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.7820$139.1000
100$2.3840$238.4000
250$2.2520$563.0000
500$2.1190$1059.5000
1250$1.8150$2268.7500
2500$1.7090$4272.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTRS10E65
Total Capacitance @ Vʀ, f36pF @ 650V, 1MHz
Average Rectified Forward Current (Iᴏ)10A
Reverse Leakage Current @ Rated Vʀ50 µA @ 650 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Junction Temperature Range175°C (Max)
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time > 500mA (Io)
Package Type (Mfr.)TO-220-2L
TechnologySiC (Silicon Carbide) Schottky
Max. DC Blocking Voltage (Vʀ)650 V
Forward Voltage (Vғ) @ Iғ1.6 V @ 10 A
Package / CaseTO-220-2
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)