ULN2003AINE4Bipolar (BJT) Transistor Array 50V 500mA Through Hole 16-PDIP
N/A
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ABRmicro #.ABR2045-ULN200-2842583
ManufacturerTexas Instruments
MPN #.ULN2003AINE4
Estimated Lead Time-
SampleGet Free Sample
Datasheet
ULN200x, ULQ200x(PDF)
ULN200x, ULQ200x(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 5, 2024
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Technical Specifications
SeriesULN200x
Packaging
Tube
Lifecycle StatusObsolete
Collector Current (Iᴄ)@25°C500mA
Collector Cut-off Current (Iᴄᴇs)(Max.)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Mounting StyleThrough Hole
Power - Max-
Package Type (Mfr.)16-PDIP
Transistor Type-
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Collector-Emitter Breakdown Voltage (Max.)50V
Operating Temperature-40°C ~ 105°C (TA)
Package / Case16-DIP (0.300", 7.62mm)
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
HTSUS8541.29.0095 (Other; No import duty applies)