CSD19531KCSN-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3
1:$1.7140
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD195-280184
ManufacturerTexas Instruments
MPN #.CSD19531KCS
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
CSD19531KCS(PDF)
CSD19531KCS(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.7140
Ext. Price$ 1.7140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7140$1.7140
50$1.3750$68.7500
100$1.1310$113.1000
500$0.9570$478.5000
1000$0.8120$812.0000
2000$0.7720$1544.0000
5000$0.7430$3715.0000
10000$0.7180$7180.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberCSD19531
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3870 pF @ 50 V
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance7.7mOhm @ 60A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.3V @ 250µA
Package / CaseTO-220-3
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)