TPS1100PWSingle P-channel Enhancement-Mode MOSFET
1:$0.9730
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPS110-658263
ManufacturerTexas Instruments
MPN #.TPS1100PW
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
TPS1100, TPS1100Y(PDF)
TPS1100, TPS1100Y(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.9730
Ext. Price$ 0.9730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9730$0.9730
10$0.8080$8.0800
150$0.6440$96.6000
600$0.5810$348.6000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTPS1100
Continuous Drain Current (ID) @ 25°C1.27A (Ta)
Drain-to-Source Voltage (VDS)15 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.7V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)5.45 nC @ 10 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation504mW (Ta)
RDS(on) Drain-to-Source On Resistance180mOhm @ 1.5A, 10V
Package Type (Mfr.)8-TSSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+2V, -15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case8-TSSOP (0.173", 4.40mm Width)
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PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)