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CSD86336Q3DTMosfet Array 25V 20A (Ta) 6W Surface Mount 8-VSON (3.3x3.3)

1:$1.5360

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD863-415694
ManufacturerTexas Instruments
MPN #.CSD86336Q3DT
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetCSD86336Q3D(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.5360
Ext. Price$ 1.5360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5360$1.5360
10$1.2740$12.7400
100$1.0140$101.4000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD86336Q3
Configuration2 N-Channel (Half Bridge)
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)25V
FET FeatureLogic Level Gate, 5V Drive
Gate Charge Total (Qg)(Max.)3.8nC @ 45V, 7.4nC @ 45V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)494pF @ 12.5V, 970pF @ 12.5V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 125°C
Power - Max6W
RDS(on) Drain-to-Source On Resistance9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Package Type (Mfr.)8-VSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.9V @ 250µA, 1.6V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CSD86336Q3D
Manufacturer Product Page
CSD86336Q3DT Specifications
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)