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CSD86330Q3DMosfet Array 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
1:$1.6900
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD863-319064
ManufacturerTexas Instruments
MPN #.CSD86330Q3D
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetCSD86330Q3D(PDF)
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In Stock: 16232
Shipped From Shenzhen or Hong Kong Warehouses
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.6900
Ext. Price$ 1.6900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6900$1.6900
10$1.4040$14.0400
100$1.1170$111.7000
500$0.9450$472.5000
1000$0.8020$802.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3) Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD86330Q3
Configuration2 N-Channel (Half Bridge)
Continuous Drain Current (ID) @ 25°C20A
Drain-to-Source Voltage (VDS)25V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)6.2nC @ 4.5V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)920pF @ 12.5V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max6W
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 14A, 8V
Package Type (Mfr.)8-LSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / Case8-PowerLDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)